NPN Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a 440V Collector-Emitter Breakdown Voltage (VCEO) and a 900V Collector Base Voltage (VCBO). Handles a continuous 5A Max Collector Current with a 50W Max Power Dissipation. Operates with a minimum DC current gain (hFE) of 15 and a transition frequency of 4MHz. Designed for through-hole mounting and is RoHS compliant.
Onsemi FJP5355TU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 900V |
| Collector Emitter Breakdown Voltage | 440V |
| Collector Emitter Voltage (VCEO) | 440V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 14.5V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 50W |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJP5355TU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.