NPN Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a maximum collector current of 8A and a collector-emitter voltage (VCEO) of 400V. Offers a maximum power dissipation of 40W and a transition frequency of 4MHz. Operates within a temperature range of -65°C to 150°C, with a minimum DC rated voltage of 400V. Designed for through-hole mounting.
Frequency4MHz
PackageTO-220-3
Current Rating8A
MountingThrough Hole
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Technical Specifications
Onsemi FJPF13007 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 40W |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FJPF13007 Datasheet
Download the complete datasheet for Onsemi FJPF13007 to view detailed technical specifications.
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