NPN Bipolar Junction Transistor (BJT) in TO-220-3 package, featuring 800V collector-emitter breakdown voltage and 5A maximum collector current. This through-hole mounted power transistor offers a minimum hFE of 20 and a transition frequency of 15MHz. Operating across a wide temperature range from -55°C to 125°C, it has a maximum power dissipation of 40W. The component is RoHS compliant and supplied in a rail/tube package.
PackageTO-220-3
MountingThrough Hole
PolarityNPN
Power40W
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Technical Specifications
Onsemi FJPF2145TU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.1kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 159mV |
| Collector Emitter Voltage (VCEO) | 800V |
| Collector-emitter Voltage-Max | 2V |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 15MHz |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.07mm |
| hFE Min | 20 |
| Length | 10.36mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | ESBC™ |
| Transition Frequency | 15MHz |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJPF2145TU Datasheet
Download the complete datasheet for Onsemi FJPF2145TU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.