NPN Epitaxial Silicon Transistor, SOT-23-3 package, ideal for surface mount applications. Features a 50V collector-emitter breakdown voltage and 100mA continuous collector current. Offers a minimum hFE of 20 and a transition frequency of 250MHz. Operates across a wide temperature range of -55°C to 150°C, with a maximum power dissipation of 200mW. Packaged on a 3000-piece tape and reel, this component is lead-free and RoHS compliant.
PackageSOT-23-3
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi FJV3101RMTF technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 0.93mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.03g |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJV3101RMTF Datasheet
Download the complete datasheet for Onsemi FJV3101RMTF to view detailed technical specifications.
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