NPN Epitaxial Silicon Transistor, surface mount in SOT-23-3 package. Features 50V collector-emitter breakdown voltage, 100mA continuous collector current, and 250MHz transition frequency. Offers a minimum hFE of 68 and a maximum power dissipation of 200mW. Operates across a wide temperature range from -55°C to 150°C. Packaged on a 3000-piece tape and reel, this RoHS compliant component is lead-free.
PackageSOT-23-3
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi FJV3113RMTF technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 0.93mm |
| hFE Min | 68 |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.03g |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJV3113RMTF Datasheet
Download the complete datasheet for Onsemi FJV3113RMTF to view detailed technical specifications.
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