PNP Epitaxial Silicon Transistor with integrated bias resistor, suitable for surface mount applications in a SOT-23-3 package. Features a maximum collector current of -100mA and a collector-emitter breakdown voltage of 50V. Offers a minimum hFE of 68 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW. This RoHS compliant component is supplied on a 3000-piece tape and reel.
PackageSOT-23-3
Current Rating-100mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi FJV4104RMTF technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -10V |
| hFE Min | 68 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -50V |
| Weight | 0.03g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJV4104RMTF Datasheet
Download the complete datasheet for Onsemi FJV4104RMTF to view detailed technical specifications.
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