The FJV4109RMTF is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 100mA. It is packaged in a surface mount SOT-23-3 package and is lead-free. The transistor has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 200mW. It is RoHS compliant and has a minimum current gain of 100. The FJV4109RMTF is suitable for use in a variety of applications including general-purpose switching and amplification.
PackageSOT-23-3
Current Rating-100mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi FJV4109RMTF technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJV4109RMTF Datasheet
Download the complete datasheet for Onsemi FJV4109RMTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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