
PNP Epitaxial Silicon Transistor with integrated bias resistor, designed for surface mount applications in a SOT-23-3 package. Features a 50V Collector-Emitter Voltage (VCEO) and a 50V Collector Base Voltage (VCBO). Offers a continuous collector current rating of -100mA and a minimum DC current gain (hFE) of 68. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 200mW and a transition frequency of 200MHz. Packaged on a 3000-piece tape and reel, this RoHS compliant component is lead-free.
Onsemi FJV4114RMTF technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 68 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -50V |
| Weight | 0.03g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJV4114RMTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
