PNP Epitaxial Silicon Transistor, designed for surface mount applications in a SOT-23 package. Features a maximum collector emitter voltage (VCEO) of 120V and a continuous collector current rating of -50mA. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Packaged on a 3000-piece tape and reel, this RoHS compliant component is lead-free.
Frequency50MHz
PackageSOT-23
Current Rating-50mA
MountingSurface Mount
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Technical Specifications
Onsemi FJV992PMTF technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-120V
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
120V
Collector-emitter Voltage-Max
300mV
Current Rating
-50mA
Emitter Base Voltage (VEBO)
-5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1.04mm
hFE Min
200
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
120V
Max Collector Current
50mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
-120V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FJV992PMTF Datasheet
Download the complete datasheet for Onsemi FJV992PMTF to view detailed technical specifications.
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