PNP Epitaxial Silicon Transistor, designed for surface mount applications in a SOT-23 package. Features a maximum collector emitter voltage (VCEO) of 120V and a continuous collector current rating of -50mA. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Packaged on a 3000-piece tape and reel, this RoHS compliant component is lead-free.
Frequency50MHz
PackageSOT-23
Current Rating-50mA
MountingSurface Mount
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Technical Specifications
Onsemi FJV992PMTF technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -50mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 1.04mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 50mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -120V |
| Weight | 0.03g |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJV992PMTF Datasheet
Download the complete datasheet for Onsemi FJV992PMTF to view detailed technical specifications.
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