FJX2222ATF

NPN BJT Transistor, 40V VCEO, 600mA IC, 300MHz, SOT-323

NPN Epitaxial Silicon Transistor for surface mount applications, featuring a 3000-piece tape and reel package. This bipolar junction transistor offers a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. With a transition frequency of 300MHz and a minimum hFE of 100, it is suitable for high-frequency operations. The component is housed in a compact SOT-323 package, measures 2mm in length, 1.25mm in width, and 0.9mm in height, with a maximum power dissipation of 325mW and an operating temperature up to 150°C.

Frequency300MHz

PackageSOT-323

Current Rating600mA

MountingSurface Mount

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Technical Specifications

Onsemi FJX2222ATF technical specifications.

General

Package/Case	SOT-323
Collector Base Voltage (VCBO)	75V
Collector Emitter Breakdown Voltage	40V
Collector Emitter Saturation Voltage	1V
Collector Emitter Voltage (VCEO)	40V
Collector-emitter Voltage-Max	1V
Current Rating	600mA
Emitter Base Voltage (VEBO)	6V
Frequency	300MHz
Gain Bandwidth Product	300MHz
Height	0.9mm
hFE Min	100
Lead Free	Lead Free
Length	2mm
Max Breakdown Voltage	40V
Max Collector Current	600mA
Max Frequency	300MHz
Max Operating Temperature	150°C
Max Power Dissipation	325mW
Mount	Surface Mount
Number of Elements	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	325mW
Radiation Hardening	No
RoHS Compliant	Yes
Transition Frequency	300MHz
DC Rated Voltage	40V
Weight	0.03g
Width	1.25mm