
NPN Epitaxial Silicon Transistor, surface mount SOT-323 package. Features 50V collector-emitter breakdown voltage, 100mA continuous collector current, and 250MHz transition frequency. Offers a minimum hFE of 68 and a maximum power dissipation of 200mW. Operates across a temperature range of -55°C to 150°C. Lead-free and RoHS compliant, supplied on a 3000-piece tape and reel.
Onsemi FJX3007RTF technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 68 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.03g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJX3007RTF to view detailed technical specifications.
No datasheet is available for this part.
