NPN Epitaxial Silicon Transistor featuring a built-in bias resistor, designed for surface mount applications in a SOT-323 package. This component offers a 50V Collector-Emitter Voltage (VCEO) and a 100mA Continuous Collector Current. Key specifications include a minimum hFE of 56, a transition frequency of 250MHz, and a maximum power dissipation of 200mW. Operating across a temperature range of -55°C to 150°C, this RoHS compliant, lead-free transistor is supplied on a 3000-piece tape and reel.
PackageSOT-323
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi FJX3008RTF technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 1mm |
| hFE Min | 56 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.03g |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJX3008RTF Datasheet
Download the complete datasheet for Onsemi FJX3008RTF to view detailed technical specifications.
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