This NPN transistor features a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. The device is rated for a maximum power dissipation of 200mW and operates over a temperature range of -55°C to 150°C. It is packaged in a SC surface mount package and is lead-free and RoHS compliant.
PackageSC
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi FJX3013RTF technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 68 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJX3013RTF Datasheet
Download the complete datasheet for Onsemi FJX3013RTF to view detailed technical specifications.
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