
PNP Epitaxial Silicon Transistor, Surface Mount in SOT-323 package. Features a Collector-Emitter Voltage (VCEO) of 40V, maximum collector current of 200mA, and a transition frequency of 250MHz. Offers a minimum hFE of 100 and a maximum power dissipation of 350mW. Operates across a temperature range of -55°C to 150°C, is lead-free, and RoHS compliant.
Onsemi FJX3906TF technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -40V |
| Weight | 0.03g |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJX3906TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.