PNP Epitaxial Silicon Transistor, Surface Mount in SOT-323 package. Features a Collector-Emitter Voltage (VCEO) of 40V, maximum collector current of 200mA, and a transition frequency of 250MHz. Offers a minimum hFE of 100 and a maximum power dissipation of 350mW. Operates across a temperature range of -55°C to 150°C, is lead-free, and RoHS compliant.
Frequency250MHz
PackageSOT-323
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Onsemi FJX3906TF technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-400mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
400mV
Current Rating
-200mA
Emitter Base Voltage (VEBO)
-5V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
350mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
-40V
Weight
0.03g
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FJX3906TF Datasheet
Download the complete datasheet for Onsemi FJX3906TF to view detailed technical specifications.
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