The FJX4004RTF is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 200mW and is packaged in the SOT-323 surface mount package. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant. It is suitable for use in a variety of applications, including general-purpose switching and amplification.
PackageSOT-323
Current Rating-100mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi FJX4004RTF technical specifications.
General
| Package/Case | SOT-323 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -10V |
| hFE Min | 68 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJX4004RTF Datasheet
Download the complete datasheet for Onsemi FJX4004RTF to view detailed technical specifications.
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