PNP Epitaxial Silicon Transistor featuring a 200MHz transition frequency and 68 minimum hFE. This surface mount component operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 200mW. It supports a continuous collector current of -100mA and a collector-emitter breakdown voltage of 50V. Packaged in SOT-323 on a 3000-REEL, this lead-free and RoHS compliant transistor is designed for efficient signal amplification.
PackageSOT-323
Current Rating-100mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi FJX4006RTF technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -10V |
| hFE Min | 68 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -50V |
| Weight | 0.03g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJX4006RTF Datasheet
Download the complete datasheet for Onsemi FJX4006RTF to view detailed technical specifications.
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