NPN Epitaxial Silicon Transistor for surface mount applications, featuring a 50V Collector-Emitter Voltage (VCEO) and 150mA Max Collector Current. This component offers a 300MHz transition frequency and a minimum hFE of 70. Packaged in a SOT-323 case, it operates across a temperature range of -55°C to 150°C and has a power dissipation of 200mW. It is lead-free and RoHS compliant.
Onsemi FJX945GTF technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 0.9mm |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 50V |
| Weight | 0.03g |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJX945GTF to view detailed technical specifications.
No datasheet is available for this part.