NPN bipolar junction transistor (BJT) in a SOT-323 surface mount package. Features a 50V collector-emitter breakdown voltage and a 150mA maximum collector current. Offers a typical 70 minimum DC current gain (hFE) and a 300MHz transition frequency. Operates across a wide temperature range from -55°C to 150°C with 200mW maximum power dissipation. Lead-free and RoHS compliant.
Onsemi FJX945OTF technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJX945OTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.