PNP Bipolar Junction Transistor (BJT) for audio-frequency low-noise amplification. Features a 120V Collector-Emitter Breakdown Voltage (VCEO) and 100mA Max Collector Current. Offers a 100MHz Gain Bandwidth Product and 200 minimum hFE. Packaged in SOT-323 surface mount for tape and reel deployment, with a maximum power dissipation of 235mW. Operates across a -55°C to 150°C temperature range.
Frequency100MHz
PackageSOT-323
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi FJX992TF technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | -120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| hFE Min | 200 |
| Length | 2mm |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 235mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 235mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | FJX992 |
| Transition Frequency | 100MHz |
| Weight | 0.03g |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJX992TF Datasheet
Download the complete datasheet for Onsemi FJX992TF to view detailed technical specifications.
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