PNP Epitaxial Silicon Transistor with integrated bias resistor, designed for surface mount applications. Features a maximum collector-emitter voltage of 50V and a continuous collector current of -100mA. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 200mW. Offers a minimum DC current gain (hFE) of 68 and a transition frequency of 200MHz. Packaged in a 3000-piece tape and reel, this component is lead-free and RoHS compliant.
Current Rating-100mA
MountingSurface Mount
PolarityPNP
Power200mW
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Technical Specifications
Onsemi FJY4006R technical specifications.
General
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -10V |
| hFE Min | 68 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -50V |
| Weight | 0.03g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJY4006R Datasheet
Download the complete datasheet for Onsemi FJY4006R to view detailed technical specifications.
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