
PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 150mA. Operates with a transition frequency of 180MHz and a minimum hFE of 40. Encased in a 3-pin SOT-623F package, supplied on tape and reel. Rated for operation from -55°C to 150°C, this lead-free and RoHS compliant component offers 100mW power dissipation.
Onsemi FJZ733OTF technical specifications.
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -150mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 180MHz |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 100mW |
| RoHS Compliant | Yes |
| Series | FJZ733 |
| Transition Frequency | 180MHz |
| DC Rated Voltage | -50V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJZ733OTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.