
PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector current of 150mA and a collector-emitter breakdown voltage of 50V. Offers a transition frequency of 180MHz and a minimum hFE of 40. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 100mW. Packaged in tape and reel, this lead-free and RoHS compliant component is ideal for various electronic circuits.
Onsemi FJZ733YTF technical specifications.
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -150mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 180MHz |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 100mW |
| RoHS Compliant | Yes |
| Series | FJZ733 |
| Transition Frequency | 180MHz |
| DC Rated Voltage | -50V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJZ733YTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.