NPN bipolar junction transistor (BJT) for surface mount applications. Features a 50V collector-emitter voltage (VCEO) and a maximum collector current of 150mA. Offers a minimum DC current gain (hFE) of 70 and a transition frequency of 300MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 100mW. Packaged in tape and reel, this lead-free and RoHS compliant component is ideal for various electronic circuits.
Frequency300MHz
Current Rating150mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi FJZ945GTF technical specifications.
General
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 100mW |
| RoHS Compliant | Yes |
| Series | FJZ945 |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJZ945GTF Datasheet
Download the complete datasheet for Onsemi FJZ945GTF to view detailed technical specifications.
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