NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 45V Collector-Emitter Voltage (VCEO) and 500mA Max Collector Current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Packaged in a SOT-23-6 surface mount configuration, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Onsemi FMB100 technical specifications.
| Package/Case | SOT-23-6 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 700mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | FMB100 |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 45V |
| Weight | 0.036g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FMB100 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.