PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 60V collector-emitter breakdown voltage and a 600mA maximum collector current. Offers a minimum hFE of 100 and a transition frequency of 250MHz. Packaged in SOIC for surface mounting, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency250MHz
PackageSOIC
Current Rating-600mA
MountingSurface Mount
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Technical Specifications
Onsemi FMB2907A technical specifications.
General
| Package/Case | SOIC |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 700mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -60V |
| Weight | 0.036g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FMB2907A Datasheet
Download the complete datasheet for Onsemi FMB2907A to view detailed technical specifications.
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