PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 40V collector-emitter voltage (VCEO) and a 200mA maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Packaged in SOIC for surface mounting, this component operates within a temperature range of -55°C to 150°C and is supplied on a 3000-piece tape and reel. RoHS compliant and lead-free.
Frequency200MHz
PackageSOIC
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Onsemi FMB3906 technical specifications.
General
Package/Case
SOIC
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
400mV
Current Rating
-200mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
700mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-40V
Weight
0.036g
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FMB3906 Datasheet
Download the complete datasheet for Onsemi FMB3906 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.