PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 30V collector-emitter breakdown voltage and a 1A maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Packaged in a SOT-23-6 case, this lead-free and RoHS compliant component operates from -55°C to 150°C with a 700mW power dissipation.
Frequency100MHz
PackageSOT-23-6
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Onsemi FMBS549 technical specifications.
General
| Package/Case | SOT-23-6 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 700mW |
| RoHS Compliant | Yes |
| Series | FMBS549 |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FMBS549 Datasheet
Download the complete datasheet for Onsemi FMBS549 to view detailed technical specifications.
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