NPN bipolar junction transistor (BJT) for surface mount applications. Features a 160V collector-emitter breakdown voltage and a 600mA maximum collector current. Operates with a 300MHz transition frequency and a minimum hFE of 80. Housed in a SOT-23-6 package, this lead-free and RoHS compliant component offers a wide operating temperature range from -55°C to 150°C. Maximum power dissipation is 700mW.
Frequency300MHz
PackageSOT-23-6
Current Rating600mA
MountingSurface Mount
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Technical Specifications
Onsemi FMBS5551 technical specifications.
General
| Package/Case | SOT-23-6 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 200mV |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 160V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FMBS5551 Datasheet
Download the complete datasheet for Onsemi FMBS5551 to view detailed technical specifications.
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