PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter breakdown voltage and 500mA max collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 50MHz. Operates across a wide temperature range from -55°C to 150°C with 700mW power dissipation. Packaged in SOT-23-6, this RoHS compliant component is supplied on tape and reel.
Frequency50MHz
PackageSOT-23-6
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Onsemi FMBSA56 technical specifications.
General
| Package/Case | SOT-23-6 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 700mW |
| RoHS Compliant | Yes |
| Series | FMBSA56 |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FMBSA56 Datasheet
Download the complete datasheet for Onsemi FMBSA56 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.