The FMG1G50US60H is a 600V insulated gate bipolar transistor (IGBT) module from Onsemi. It features a collector-emitter breakdown voltage of 600V and a maximum collector current of 50A. The module is designed for high-power applications and has a maximum power dissipation of 250W. It operates over a temperature range of -40°C to 150°C and is compliant with RoHS regulations. The module is packaged in a bulk format and is suitable for chassis mount applications.
PackageModule
Current Rating50A
MountingChassis Mount
Power250W
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Technical Specifications
Onsemi FMG1G50US60H technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector-emitter Voltage-Max | 2.8V |
| Current Rating | 50A |
| Input | Standard |
| Input Capacitance | 3.46nF |
| Lead Free | Lead Free |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 250W |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Package Quantity | 15 |
| Packaging | Bulk |
| Power Dissipation | 250W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FMG1G50US60H Datasheet
Download the complete datasheet for Onsemi FMG1G50US60H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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