The FMG1G75US60H is a 600V insulated gate bipolar transistor (IGBT) module from Onsemi. It features a collector-emitter breakdown voltage of 600V and a maximum collector current of 75A. The module is designed for chassis mount applications and has a maximum power dissipation of 310W. It operates within a temperature range of -40°C to 150°C and is compliant with RoHS regulations.
PackageModule
Current Rating75A
MountingChassis Mount
Power310W
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Technical Specifications
Onsemi FMG1G75US60H technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector-emitter Voltage-Max | 2.8V |
| Current Rating | 75A |
| Input | Standard |
| Input Capacitance | 7.056nF |
| Lead Free | Lead Free |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 310W |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Package Quantity | 15 |
| Packaging | Bulk |
| Power Dissipation | 310W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FMG1G75US60H Datasheet
Download the complete datasheet for Onsemi FMG1G75US60H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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