The FMG2G150US60E is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 150A. It has a maximum power dissipation of 500W and is packaged in a module format. The device is RoHS compliant and operates over a temperature range of -40°C to 150°C. It is suitable for use in high-power applications and is available in a bulk packaging option.
PackageModule
Current Rating150A
MountingChassis Mount, Screw
Power500W
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Technical Specifications
Onsemi FMG2G150US60E technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.8V |
| Current Rating | 150A |
| Input | Standard |
| Input Capacitance | 12.84nF |
| Lead Free | Lead Free |
| Max Collector Current | 150A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 500W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 15 |
| Packaging | Bulk |
| Power Dissipation | 500W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FMG2G150US60E Datasheet
Download the complete datasheet for Onsemi FMG2G150US60E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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