NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-226 package. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 150MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Lead-free and RoHS compliant.
Frequency150MHz
PackageTO-226
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi FPN530 technical specifications.
General
Package/Case
TO-226
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
300mV
Current Rating
3A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
hFE Min
100
Lead Free
Lead Free
Max Collector Current
3A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
1500
Packaging
Bulk
Polarity
NPN
Power Dissipation
1W
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Onsemi FPN530 Datasheet
Download the complete datasheet for Onsemi FPN530 to view detailed technical specifications.
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