PNP Bipolar Junction Transistor (BJT) in a TO-226 package, designed for through-hole mounting. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1W. This component is lead-free and RoHS compliant.
Frequency100MHz
PackageTO-226
Current Rating-3A
MountingThrough Hole
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Technical Specifications
Onsemi FPN630 technical specifications.
General
Package/Case
TO-226
Collector Base Voltage (VCBO)
35V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
300mV
Current Rating
-3A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
hFE Min
100
Lead Free
Lead Free
Max Collector Current
3A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
1500
Packaging
Bulk
Polarity
PNP
Power Dissipation
1W
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-30V
Compliance
RoHS
Compliant
Datasheet
Onsemi FPN630 Datasheet
Download the complete datasheet for Onsemi FPN630 to view detailed technical specifications.
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