PNP Bipolar Junction Transistor (BJT) in a TO-226 package, designed for through-hole mounting. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1W. This component is lead-free and RoHS compliant.
Frequency100MHz
PackageTO-226
Current Rating-3A
MountingThrough Hole
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Technical Specifications
Onsemi FPN630 technical specifications.
General
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FPN630 Datasheet
Download the complete datasheet for Onsemi FPN630 to view detailed technical specifications.
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