N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 15A continuous drain current. Offers a maximum on-resistance of 480mΩ at a gate-source voltage of 30V. Designed with a 218W power dissipation and a TO-3P package for through-hole mounting. Includes fast switching characteristics with turn-on delay time of 25ns and fall time of 100ns. Operates across a wide temperature range from -55°C to 150°C.
MountingThrough Hole
PolarityN-CHANNEL
Power218W
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Technical Specifications
Onsemi FQA13N50CF technical specifications.
General
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 480MR |
| Element Configuration | Single |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.1mm |
| Input Capacitance | 2.055nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 218W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 218W |
| Rds On Max | 480mR |
| RoHS Compliant | Yes |
| Series | FRFET® |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 25ns |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA13N50CF Datasheet
Download the complete datasheet for Onsemi FQA13N50CF to view detailed technical specifications.
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