N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 140A continuous drain current. Offers a low 10mΩ drain-source on-resistance. Operates with a 4V threshold voltage and 25V gate-source voltage. This single-element MOSFET boasts a maximum power dissipation of 375W and a maximum operating temperature of 175°C. Packaged in a TO-3P through-hole mount.
Current Rating140A
MountingThrough Hole
PolarityN-CHANNEL
Power375W
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Technical Specifications
Onsemi FQA140N10 technical specifications.
General
| Continuous Drain Current (ID) | 140A |
| Current Rating | 140A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 10mR |
| Element Configuration | Single |
| Fall Time | 360ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 18.9mm |
| Input Capacitance | 7.9nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 375W |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 350ns |
| Turn-On Delay Time | 75ns |
| DC Rated Voltage | 100V |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA140N10 Datasheet
Download the complete datasheet for Onsemi FQA140N10 to view detailed technical specifications.
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