FQA160N08

N-Channel Power MOSFET, QFET® series, featuring 80V drain-source breakdown voltage and a continuous drain current of 160A. This single-element transistor offers a low on-resistance of 7mΩ and a maximum power dissipation of 375W. Designed for through-hole mounting in a TO-3P package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a turn-on delay time of 85ns and a fall time of 410ns. RoHS compliant and lead-free.