N-channel MOSFET transistor featuring a 500V drain-source breakdown voltage and a continuous drain current of 20A. This through-hole component offers a low on-resistance of 265mΩ and a maximum power dissipation of 277W. Operating across a temperature range of -55°C to 150°C, it exhibits fast switching characteristics with turn-on delay times of 40ns and fall times of 110ns. The device is RoHS compliant and lead-free.
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
Power277W
Quick Jump:
Technical Specifications
Onsemi FQA18N50V2 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 265mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.29nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 277W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 277W |
| Radiation Hardening | No |
| Rds On Max | 265mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 95ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA18N50V2 Datasheet
Download the complete datasheet for Onsemi FQA18N50V2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
