N-Channel Power MOSFET, QFET® series, featuring a 250V drain-source breakdown voltage and a continuous drain current of 27A. This single-element transistor offers a low on-resistance of 110mΩ and a maximum power dissipation of 210W. Designed for through-hole mounting in a TO-3P package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a turn-on delay time of 32ns and a fall time of 120ns.
Current Rating27A
MountingThrough Hole
PolarityN-CHANNEL
Power210W
Quick Jump:
Technical Specifications
Onsemi FQA27N25 technical specifications.
General
| Continuous Drain Current (ID) | 27A |
| Current Rating | 27A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.45nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 210W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 210W |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 32ns |
| DC Rated Voltage | 250V |
| Weight | 6.401g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA27N25 Datasheet
Download the complete datasheet for Onsemi FQA27N25 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
