N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and a continuous drain current of 28.4A. This device offers a low on-resistance of 160mΩ at a nominal Vgs of 5V, with a maximum power dissipation of 310W. It operates within a temperature range of -55°C to 150°C and is packaged in a TO-3P (450-TUBE) for through-hole mounting. Key switching characteristics include a turn-on delay time of 100ns and a fall time of 175ns.
Current Rating28.4A
MountingThrough Hole
PolarityN-CHANNEL
Power310W
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Technical Specifications
Onsemi FQA28N50 technical specifications.
General
| Continuous Drain Current (ID) | 28.4A |
| Current Rating | 28.4A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 500V |
| Dual Supply Voltage | 500V |
| Element Configuration | Single |
| Fall Time | 175ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 18.9mm |
| Input Capacitance | 5.6nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 250ns |
| Turn-On Delay Time | 100ns |
| DC Rated Voltage | 500V |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA28N50 Datasheet
Download the complete datasheet for Onsemi FQA28N50 to view detailed technical specifications.
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