The FQA28N50_F109 is a high-power N-channel FET from Onsemi with a maximum drain to source voltage of 500V and continuous drain current of 28.4A. It features an on-resistance of 160mR and a maximum power dissipation of 310W. The device is mounted through a hole and packaged in a quantity of 30 units per rail or tube. The FQA28N50_F109 operates within a typical operating temperature range of -40°C to 150°C.
MountingThrough Hole
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Technical Specifications
Onsemi FQA28N50_F109 technical specifications.
General
| Continuous Drain Current (ID) | 28.4A |
| Drain to Source Voltage (Vdss) | 500V |
| Input Capacitance | 5.6nF |
| Max Power Dissipation | 310W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Rds On Max | 160mR |
| Series | QFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA28N50_F109 Datasheet
Download the complete datasheet for Onsemi FQA28N50_F109 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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