ONSEMI

FQA28N50F

Datasheet

500V 28.4A N-Channel MOSFET, 160mR Rds On, 310W PD

Onsemi

FQA28N50F

Name: FQA28N50F Onsemi
Brand: Onsemi
SKU: FQA28N50F

500V 28.4A N-Channel MOSFET, 160mR Rds On, 310W PD

N-Channel Power Field-Effect Transistor featuring a 500V Drain to Source Breakdown Voltage and a continuous drain current of 28.4A. This through-hole mounted MOSFET offers a low 160mR drain-to-source resistance and a maximum power dissipation of 310W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching characteristics with turn-on delay times of 100ns and fall times of 175ns.

Current Rating28.4A

MountingThrough Hole

PolarityN-CHANNEL

Power310W

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Technical Specifications

Onsemi FQA28N50F technical specifications.

General

Continuous Drain Current (ID)	28.4A
Current Rating	28.4A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	160mR
Drain to Source Voltage (Vdss)	500V
Fall Time	175ns
Gate to Source Voltage (Vgs)	30V
Height	18.9mm
Input Capacitance	5.6nF
Lead Free	Lead Free
Length	15.8mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	310W
Mount	Through Hole
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	310W
Rds On Max	160mR
Series	FRFET®
Turn-Off Delay Time	250ns
Turn-On Delay Time	100ns
DC Rated Voltage	500V
Weight	6.401g
Width	5mm