P-channel Power MOSFET featuring a -150V drain-source breakdown voltage and a continuous drain current of 36A. This single-element MOSFET offers a low drain-source on-resistance of 90mΩ, a maximum power dissipation of 294W, and operates within a temperature range of -55°C to 175°C. Designed for through-hole mounting in a TO-3P package, it boasts fast switching characteristics with a turn-on delay of 50ns and a fall time of 150ns.
Current Rating-36A
MountingThrough Hole
PolarityP-CHANNEL
Power294W
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Technical Specifications
Onsemi FQA36P15 technical specifications.
General
| Continuous Drain Current (ID) | 36A |
| Current Rating | -36A |
| Drain to Source Breakdown Voltage | -150V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 90mR |
| Element Configuration | Single |
| Fall Time | 150ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 18.9mm |
| Input Capacitance | 3.32nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 294W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 294W |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 50ns |
| DC Rated Voltage | -150V |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA36P15 Datasheet
Download the complete datasheet for Onsemi FQA36P15 to view detailed technical specifications.
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