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Technical Specifications
Onsemi FQA36P15_F109 technical specifications.
General
| Continuous Drain Current (ID) | 36A |
| Drain to Source Breakdown Voltage | -150V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 150ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.32nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 294W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 294W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 50ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA36P15_F109 Datasheet
Download the complete datasheet for Onsemi FQA36P15_F109 to view detailed technical specifications.
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