N-channel Power MOSFET featuring 300V drain-source breakdown voltage and 43.5A continuous drain current. This single-element MOSFET offers a low on-resistance of 69mΩ and a maximum power dissipation of 310W. Designed for through-hole mounting in a TO-3P package, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with turn-on delay of 85ns and fall time of 230ns. RoHS compliant and lead-free.
Current Rating43.5A
MountingThrough Hole
PolarityN-CHANNEL
Power310W
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Technical Specifications
Onsemi FQA44N30 technical specifications.
General
| Continuous Drain Current (ID) | 43.5A |
| Current Rating | 43.5A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 69mR |
| Drain to Source Voltage (Vdss) | 300V |
| Element Configuration | Single |
| Fall Time | 230ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.1mm |
| Input Capacitance | 5.6nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Radiation Hardening | No |
| Rds On Max | 69mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 240ns |
| Turn-On Delay Time | 85ns |
| DC Rated Voltage | 300V |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA44N30 Datasheet
Download the complete datasheet for Onsemi FQA44N30 to view detailed technical specifications.
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