
N-channel power MOSFET featuring 150V drain-source breakdown voltage and 50A continuous drain current. This single-element MOSFET offers a low 42mΩ maximum drain-source on-resistance. Operating across a wide temperature range of -55°C to 175°C, it boasts a 250W maximum power dissipation. Key switching characteristics include a 35ns turn-on delay and 200ns fall time. Packaged in TO-3P for through-hole mounting, this RoHS compliant component is supplied in a 450-tube.
Onsemi FQA46N15 technical specifications.
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 42MR |
| Element Configuration | Single |
| Fall Time | 200ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.1mm |
| Input Capacitance | 3.25nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 42mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | 150V |
| Weight | 6.401g |
| Width | 5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQA46N15 to view detailed technical specifications.
No datasheet is available for this part.
