The FQA46N15_F109 is a high-power N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 150V and a continuous drain current of 50A. The device has a maximum power dissipation of 250W and is packaged in a through-hole package. The FQA46N15_F109 is RoHS compliant and part of the QFET series.
MountingThrough Hole
PolarityN-CHANNEL
Power250W
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Technical Specifications
Onsemi FQA46N15_F109 technical specifications.
General
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 200ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 3.25nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 42mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA46N15_F109 Datasheet
Download the complete datasheet for Onsemi FQA46N15_F109 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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