N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 55A continuous drain current. This single-element transistor offers a low 40mΩ drain-source on-resistance and 310W maximum power dissipation. Designed for through-hole mounting in a TO-3P package, it operates from -55°C to 150°C and includes fast switching characteristics with turn-on delay of 100ns and fall time of 250ns.
Current Rating55A
MountingThrough Hole
PolarityN-CHANNEL
Power310W
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Technical Specifications
Onsemi FQA55N25 technical specifications.
General
| Continuous Drain Current (ID) | 55A |
| Current Rating | 55A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 40mR |
| Element Configuration | Single |
| Fall Time | 250ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 18.9mm |
| Input Capacitance | 6.25nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Rds On Max | 40mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 200ns |
| Turn-On Delay Time | 100ns |
| DC Rated Voltage | 250V |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA55N25 Datasheet
Download the complete datasheet for Onsemi FQA55N25 to view detailed technical specifications.
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