The FQA6N70 is a high-voltage N-channel MOSFET with a maximum drain-to-source breakdown voltage of 700V and a continuous drain current of 6.4A. It has a maximum power dissipation of 152W and an operating temperature range of -55°C to 150°C. The device is lead-free and RoHS compliant, packaged in a rail/Tube with 30 units per package. The FQA6N70 is suitable for high-power applications requiring a high voltage and current rating.
Current Rating6.4A
MountingThrough Hole
PolarityN-CHANNEL
Power152W
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Technical Specifications
Onsemi FQA6N70 technical specifications.
General
| Continuous Drain Current (ID) | 6.4A |
| Current Rating | 6.4A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 700V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 152W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 152W |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 55ns |
| DC Rated Voltage | 700V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA6N70 Datasheet
Download the complete datasheet for Onsemi FQA6N70 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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