N-channel MOSFET transistor featuring 800V drain-source breakdown voltage and 6.3A continuous drain current. This through-hole component offers a low Rds(on) of 1.95 Ohms and a maximum power dissipation of 185W. Operating across a wide temperature range from -55°C to 150°C, it includes fast switching characteristics with turn-on delay of 30ns and fall time of 45ns. The device is RoHS compliant and lead-free, packaged in a TO-3P style for efficient heat dissipation.
Current Rating6.3A
MountingThrough Hole
PolarityN-CHANNEL
Power185W
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Technical Specifications
Onsemi FQA6N80 technical specifications.
General
| Continuous Drain Current (ID) | 6.3A |
| Current Rating | 6.3A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.95R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 23.6mm |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 185W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 185W |
| Rds On Max | 1.95R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA6N80 Datasheet
Download the complete datasheet for Onsemi FQA6N80 to view detailed technical specifications.
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